Publications

發表成果

  
JOURNALS AND CONFERENCE PROCEEDINGS: 


2024

1. "Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel," Y.-K. Liang, J.-Y. Zheng, Y.-L. Lin, Y.-C. Lu, D.-R. Hsieh, T.-T. Chou, C.-C. Kei, H.-Y. Huang, Y.-M. Lin, Y.-C. Tseng, T.-S. Chao, E. Y. Chang, K. Toprasertpong, S. Takagi, and C.-H. Lin, IEEE Transactions on Electron Devices, 2024.

2. "(Invited) Polarization Stability Improvement for Hf0.5Zr0.5O2-Based Ferroelectric Capacitor," Y. -K. Liang, L. -C. Peng, C. -H. Chiu, Y.-Y. Hsiao and C. -H. Lin, © 2024 ECS - The Electrochemical Society, 2024.

3."Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue," Y. -K. Liang, Z. -H. Liu Z. -C Cai, X. -Y Han, H.-Y. Huang, Y. -M. Lin, Edward Yi Chang, C. -H. Lin, Mitsuru Takenaka, Kasidit Toprasertpong, and Shinichi Takagi, IEEE Electron Device Letters, 2024.

4."Investigation of In-Sn-Zn Composition on the Characterization of Submicron Channel Length Ultra-Thin Atomic Layer Deposited InSnZnO Channel Transistors," Y. -K. Liang, L.-C. Peng, Y. -L. Lin, J.-Y. Zheng, D. -R. Hsieh, T. -T. Chou, H. -Y. Huang, Y. -M. Lin, Y. -C. Tseng, T. -S. Chao, Edward-Yi Chang, Kasidit Toprasertpong, Shinichi Takagi and C. H. Lin, 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 2024.

5."Performances Analysis for Core-Shell Si/InxGa1-xAs FinFET," Y. -C. Lu, K. -L. Chen, Ping Huang, S. -H. Chen, Yu Chen, Edward-Yi Chang, and C. -H. Lin, IEEE Transactions on Electron Devices, 2024.

2023

1. "First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics", Y.-K. Liang, J.-Y. Zheng, Y.-L. Lin, Y. Chen, K.-L. Chen, D.-R. Hsieh, L.-C. Peng, C.-H. Chiu, Y.-C. Lu, T.-T. Chou, C.-C. Kei, C.-C. Lu, H.-Y. Huang, Y.-M. Lin, Y.-C. Tseng, T.-S. Chao, E. Y. Chang, C.-H. Lin, 2023 IEEE International Electron Devices Meeting (IEDM 2023), 2023.

2. "Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics", Y.-K. Liang, W.-L. Li, J.-Y. Zheng, Yu-Lon Lin, Y.-C. Lu, C.-H. Chiu, D.-R. Hsieh, T.-T. Chou, C.-C. Kei, H.-Y. Huang, Y.-M. Lin, Y.-C. Tseng, T.-S. Chao, E. Y. Chang, C.-H. Lin, IEEE Electron Device Letters, 2023.

3. ''Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm (802 mS/mm @VDS = 2V) '', Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Wei-Li Li, Yu-Cheng Lu, Dong-Ru Hsieh, Li-Chi Peng, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, and Chun-Hsiung Lin, 2023 Symposium on Symposium on VLSI Technology and Circuits (VLSI Symp.), 2023.

4. ''Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition'', Yan-Kui Liang, Jing-Wei Lin, Li-Chi Peng, Yi Miao Hua, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward Yi Chang, and Chun-Hsiung Lin, IEEE Transactions on Electron Devices, 2023.

5. ''Effects of In/Zn Composition on the Performance of Ultra-Thin Atomic Layer Deposited InxZn1-xO Channel Thin-Film Transistors'', Yan-Kui Liang, Jun-Yang Zheng, Jing-Wei Lin, Yi Miao Hua, Tsung-Te Chou, Chun-Chieh Lu, Huai-Ying Huang, Yu-Ming Lin, Chi-Chung Kei, Edward Yi Chang, and Chun-Hsiung Lin, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023.

2022

1. ''ZrO2-HfO2 Superlattice Ferroelectric Capacitors with Optimized Annealing to Achieve Extremely High Polarization Stability'', Yan-Kui Liang, Wei-Li Li, Yong-Jyun Wang, Li-Chi Peng, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Ying-Hao Chu, Edward Yi Chang, and Chun-Hsiung Lin, IEEE Electron Device Letter, 2022.

2. ''Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition'', Yan-Kui Liang, Yi-Shuo Huang, Li-Chi Peng, Tsung-Ying Yang, Bo-Feng Young, Chun-Chieh Lu, Sai Hooi Yeong, Yu-Ming Lin, Chun-Jung Su, Edward-Yi Chang, Chun-Hsiung Lin, IEEE Transactions on Nanotechnology, 2022.

3. "Characterization of Ferroelectric characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes", Yan-Kui Liang, Jing-Wei Lin, Yi-Shuo Huang, Wei-Cheng Lin, Bo-Feng Young, Yu-Chuan Shih, Chun-Chieh Lu, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward Yi Chang, and Chun-Hsiung Lin, ECS Journal of Solid State Science and Technology, 2022.

4. "Atomic Layer Deposited Ultra-Thin Indium Zinc Oxide Channel Thin Film Transistor", Yan-Kui Liang, Wei-Li Lee, Jing-Wei Lin, Sih-Rong Wu, Tsung-Ying Yang, Li-Chi Peng, Tsung-Te Chou, Chi-Chung Kei, Edward-Yi Chang, Chun-Hsiung Lin, "Atomic Layer Deposited Ultra-Thin Indium Zinc Oxide Channel Thin Film Transistor", in 2022 International Conference on Solid State Devices and Materials (2022 SSDM). 

2021

1. ''Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O2 Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality'', Yan-Kui Liang, Jui-Sheng Wu, Chih-Yu Teng, Hua-Lun Ko, Quang-Ho Luc, Chun-Jung Su,  Edward Yi Chang, and Chun-Hsiung Lin, IEEE Electron Device Letter, 2021.

2. ''The Evolution of Manufacturing Technology for GaN Electronic Devices'', Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, and Edward Y. Chang. Micromachines, 12, no. 7, 737. ,2021.

3. ''Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration'', Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, and Edward Y. Chang,  Micromachines, 12, no. 10: 1159, 2021.

4. ''Control of Vth of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching'', Ping-Yu Tsai, Yu Chen, Chun-Hsiung Lin, and Edward Yi Chang,  Applied Physics Express, 14 126501, 2021.

5. "Oxygen-based digital etch for arsenic-based III-V materials and the fabrication of InGaAs MOSFET", Yu Chen, Yan-Kui Liang, and Chun-Hsiung Lin, International Electron Devices & Materials Symposium 2021 (IEDMs 2021) Nov. 2021. 

6. "Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor," Y.-K. Liang, J.-W. Lin, J. S. Wu, C. J. Su, E. Y. Chang, and C.-H. Lin,   240th The Electrochemical Society Meeting (ECS meeting), Oct. 2021.

7. "Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions, J.-W.Lin, Y.-K.Liang, Y. Chen, Z.-H. Li, T.-C. Chiang, P.-T. Liu, E.Y. Chang, and C.-H. Lin, 240th The Electrochemical Society Meeting (ECS meeting), Oct. 2021.

8. "InGaAs MOSFET and InGaAs/Si Fin Core-Shell Structure," Yu Chen, Yan-Kui Liang, Pin Huang, Hung-Wei Yu, Szu-Hung Chen, Chun-Jung Su, Chun-Hsiung Lin, 2021 Symposium on Nano-Device Circuits and Technologies (2021 SNDCT), May. 2021. 


2020

1. ''Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal-organic chemical vapor deposition'', Xia Xi Zheng, Chun-Hsiung Lin, Daisuke Ueda, Edward Yi Chang, Thin Solid Films Volume 709, 138228, 2020.

2016-1994

1. "High-performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate" 2016 IEEE Symposium on VLSI Technology Tech. Dig. pp.16-17, Corresponding Author & Presenter (M. L. Huang, S. W. Chang, M. K. Chen, Y. Oniki, H. C. Chen, C. H. Lin; W. C. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee; Z. C. Chen; P. Y. Tsai; L. T. Lin; M. H. Tsai; C. L. Hung; T. C. Huang; Y. C. Lin; Y. -C. Yeo; S. M. Jang; H. Y. Hwang; Howard C. -H. Wang; Carlos H. Diaz)

2. "In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate" 2015 IEEE Symposium on VLSI Tech. Dig. pp. T204-205, Corresponding Author & Presenter (M. L. Huang, S. W. Chang, M. K. Chen, C. H. Fan, H. T. Lin, C. H. Lin, R. L. Chu, K. Y. Lee, M. A. Khaderbad, Z. C. Chen, C. H. Lin, C. H. Chen, L. T. Lin, H. J. Lin, H. C. Chang, C. L. Yang, Y. K. Leung, Y. -C. Yeo, S. M. Jang, H. Y. Hwang, Carlos H. Diaz)

3. "Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate" Appl. Phys. Express 7, 041202 (2014) (Y.C. Lin, M.L. Huang, C.Y. Chen, M.K. Chen, H.T. Lin, P.Y. Tsai, C. H. Lin, H. C. Chang, T. L. Lee, C.C. Lo, S. M. Jang, C. H. Diaz, H. Y. Hwang, Y. C. Su, E. Y. Chang)

4. "High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations" AIP Advances 4, 047108 (2014) (C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, and C. H. Diaz)

5. "Electrical characteristics of Al2O3/InSb MOSCAPs and the effect of post-deposition annealing temperatures" IEEE Trans. Electron Device 60, pp. 1555-1560 (2013)(H. D. Trinh, Y. C. Lin, E. Y. Chang, C. T. Lee, S. Y. Wang, Y. S. Chiu, Q. H. Luc, H. C. Chang, C. H. Lin, S. Jang, C. H. Diaz)

6. "Electrical characterization and materials stability analysis of La2O3/HfO2 composite oxides on n-In0.53Ga0.47As MOS capacitors with different annealing temperatures" IEEE Electron Device Letters 34, pp.1229-1231 (2013)(Y. C. Lin, H. D. Trinh, T. W. Chuang, H. Iwai, K. Kakushima, P. Ahmet, C. H. Lin, C. H. Diaz, H. C. Chang, S. M. Jang, and E. Y. Chang)

7. "High-reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates" 2010 IEEE Intl. Conf. InP and Related Materials Proc., pp. 1-4 (Y. C. Chou, D. L. Leung, M. Biedenbender, D. C. Eng, D. Buttari, X. B. Mei, C. H. Lin, R. S. Tsai, R. Lai, M. E. Barsky, M. Wojtowicz, A. K. Oki, T. R. Block)

8. "Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high-reliability applications" 2010 IEEE International Reliability Physics Symposium (IRPS) pp. 807-812 (Y. C. Chou, D. L. Leung, M. Biedenbender, D. Buttari, D. C. Eng, R. S. Tsai, C. H. Lin, L. S. Lee, X. B. Mei, M. Wojtowicz, M. E. Barsky, R. Lai, A.K. Oki, T. R. Block)

9. "Sub-mW operation of InP HEMT X-band low-noise amplifiers for low power applications" 2009 IEEE Compound Semiconductor. IC (CSIC) Symposium, pp.133-136 (C. H. Lin, X. B. Mei, Y. C. Chou, L. S. Lee, J. M. Yang, M. Y. Nishimoto, P. H. Liu, R. To, A. Cavus, R. Tsai, M. Wojtowicz, and R. Lai)

10. "InGaAs/InAlAs/InP power HEMT with an improved ohmic contact and an extreme high operating voltage" 2009 IEEE Intl. Conf. InP and Related Materials Proc. pp.204-206 (X. B. Mei, D. Farkas, W. B. Luo, C. H. Lin, L. J. Lee, W. Liu, P. H. Liu, A. Cavus, and R. Lai)

11. "Manufacturable tri-stack AlSb/InAs HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications" 2009 IEEE Intl. Conf. InP and Related Materials Proc. pp. 200-203(Y. C. Chou, P. Chang-Chien, J. M. Yang, M. Y. Nishimoto, K. Hennig, M. D. Lange, X. Zeng, M. R. Parlee, C. H. Lin, L. S. Lee, P. S. Nam, M. Wojtowicz, M. E. Barsky, A. K. Oki, J. B. Boos, B. R. Bennett, N. A. Papanicolaou)

12. " A W-band InGaAs/InAlAs/InP HEMT low-noise amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz" 2008 IEEE Intl. Conf. InP and Related Materials Proc., pp. 63-66 (X. B. Mei, C.H. Lin, L. J. Lee, Y. M. Kim, P. H. Liu, M. Lange, A. Cavus, R. To, M. Nishimoto, R. Lai)

13. "0.1 um n+-InAs-AlSb-InAs HEMT MMIC technology for phased-array applications" 2007 IEEE Compound Semiconductor. IC (CSIC) Symposium Dig., pp. 209-212 (C. H. Lin, Y. C. Chou, M. D. Lange, J. M. Yang, M. Y. Nishimoto, J. Lee, P. S. Nam, J. B. Boos, B. R. Bennett, N. A. Papanicolaou, R. S. Tsai, A. L. Gutierrez, M. E. Barsky, T. P. Chin, M. Wojtowicz, R. Lai, A. K. Oki)
14. "Manufacturable and reliable 0.1 um AlSb/InAs HEMT MMIC technology for ultra-low power applications" 2007 IEEE MTT-S Int. Microwave Symp. Dig, pp. 461-464 (Y. C. Chou, J. M. Yang,; C. H. Lin, J. Lee, M. Lange, R. Tsai, P. S. Nam, M. Nishimoto, A. Gutierrez, H. Quach, R. Lai, D. Farkas, M. Wojtowicz, P. Chin, M. E. Barsky, A. Oki, J. B. Boos, B. R. Bennett)
15. "0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications" 2007 IEEE International Electron Devices Meeting (IEDM), pp.617-620 (Y. C. Chou, M. D. Lange, B. R. Bennett, J. B. Boos, J. M. Yang, N. A. Papanicolaou, C. H. Lin, L. J. Lee, P. S. Nam, A. L. Gutierrez, D. S. Farkas, R. S. Tsai, M. Wojtowicz, T. P. Chin, A. K. Oki)
16. "Performances of CYTOPTM low-k dielectric layer bridged GaAs-based enhancement-mode pHEMT for wireless power application" Solid-State Electronics 49 pp. 1708-1712, (2005) (C. H. Lin, F. K. Oshita, M. J. Jennison, P. C. Chang, J. Wei, C. Wilhelmi, M. Bramlett, R. Parkhurst, S. D. Strathman, and M. Maple) 
17. " Thickness effects on the properties of PZT (25-100 nm) thin films prepared by MOCVD on LaNiO3 buffered Si " J. Appl. Phys. 90, 1509 (2001)( C. H. Lin, P. A. Friddle, C. H. Ma, A. Daga, and Haydn Chen)
18. " Effect of composition and growth temperature on the dielectric properties of Pb(Sc, Ta)1-xTixO3 (PSTT) thin films by MOCVD", Ferroelectrics 264, 229-238 (2001). ( C.H. Lin, P.A. Friddle, C.H. Ma, and Haydn Chen)
19. " Electrical properties of 25 nm PZT thin films grown on Si by MOCVD" J. Appl. Phys. 88, 2157 (2000)( C. H. Lin, P. A. Friddle, X. L. Lu, Haydn Chen, Y. Kim, and T. B. Wu)
20. "Domain structure and electrical properties of highly textured PZT thin films grown on LaNiO3 buffered Si substrate By MOCVD J. Mat. Res. 15, 115 (2000) (C. H. Lin, B. M. Yen, H. C. Kuo, Haydn Chen, T. B. Wu, and G. E. Stillman )
21. "Low energy ion beam deposition of TiN thin film on Si substrates" Scripta Mat. 42, 573 (2000). ( J. H. Huang, C. H. Lin, C. H. Ma and Haydn Chen)
22. "Dielectric properties of MOCVD grown highly textured Pb(ScTa)TiO3 relaxor ferroelectric thin films on Si" Appl. Phys. Lett. 75, 2485 (1999) (C. H. Lin, S. W. Lee, Haydn Chen and T. B. Wu)
23. " Characterization of Pb(Sc, Ta)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si by MOCVD" MRS Symp. Proc. 541, 679-684 (1999)( C.H. Lin, Haydn Chen, H.C. Kuo and G.E. Stillman)
24. " Heterointerface quality of InGaP-GaAs superlattices determined by photo pumping, X-ray analysis, and TEM" Appl. Phys. Lett. 75, 1101 (1999) (Q. Yang, D. A. Kellogg, C. H. Lin, G. E. Stillman, and N. Holonyak, Jr.)
25. " InAlGaP HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results" IEEE Transactions on Microwave Theory and Techniques, 47, 1404 (1999) (Y. C. Wang; J. M. Kuo; F. Ren; J. Lothian, H. S. nm, KJ)Tsai; J. S. Weiner, H. C. Kuo; C.H. Lin; Y. K. Chen; W. E. Mayo)
26. " Growth of high-performance InGaAs/InP doped channel heterojunction field-effect transistor with a strained GaInP Schottky barrier enhanced layer by gas source MBE" J. Vac. Sci. Tech. B17, 1139 (1999) (H. C. Kuo, B. G. Moser, H. Hsia, Z. Tang, M. Feng, G. E. Stillman, C. H. Lin and Haydn Chen)
27. "Thermal reliability of Pt/Ti/Au Schottky contact on InP with a GaInP Schottky barrier enhancement layer" Mat. Res. Soc. Symp. Proc. 535, 231-236 (1999)(H.C. Kuo, C.H. Lin, B.G. Moser, H. Hsia, Z. Tang, H. Chen and G.E. Stillman)
28. "Ion beam assisted deposition of TiN thin films on Si" Materials Chemistry and Physics 59, 49-56 (1999)( J.H. Huang, C.H. Lin, and Haydn Chen)
29. "Characterization of highly textured PZT thin films grown on LaNiO3 coated Si" Mat. Res. Soc. Symp. Proc. 493, 189 (1998) (C. H. Lin, B. M. Yen, Haydn Chen, T. B. Wu, H. C. Kuo and G. E. Stillman)
30. " Structural and Optical Properties of 1.3 um wavelength InAsP/InP/InGaP strain compensated MQW modulators grown by GSMBE" J. Vac. Sci. Tech. 16, 1377 (1998) (H. C. Kuo, S. Thomas, A. P. Curtis, T. U. Horton, G. Stillman, C. H. Lin, and Haydn Chen)
31. "Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD" 1997 IEEE International Symposium on Compound Semiconductors, 95 (1998) (Q. Yang, Q. J. Hartmann, A. P. Curtis, C. H. Lin, D. A. Ahmari, D. Scott, H. C. Kuo, Haydn Chen, and G. E. Stillman)
32. " Determination of band-offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy" J. of Electronic Materials 26, 944 (1997) ( H. C. Kuo, J. Kuo, Y. Wang, C. H. Lin, Haydn Chen, and G. E. Stillman)
33. "Growth and characterization of InAsP/InP strained multiple quantum wells by GSMBE" Mat. Res. Soc. Symp. Proc. 450, 153 (1996) ( H. C. Kuo, S. Thomas, A. P. Curtis, G. Stillman, C. H. Lin, and Haydn Chen)
34. "Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloy". Mat. Res. Soc. Symp. Proc. 356, (1994) (C. H. Lin, Y. Lu*, H. C. Kuo, H. Shen, M. Dutta, J. Y Cheng, F. Ren, and J. M. Kuo)


U.S. Patents 

  1. Dual Epitaxial Growth Process for Semiconductor Device, Huan-Chieh Su, Chih-Hao Wang, Jui-Chen Huang, Chun-Hsiung Lin, US10002796B1(2018)

  2. Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same, Chun-Hsiang Fan, Chun-Hsiung Lin, Mao-Lin Huang, US9929248B2 (2018)

  3. Semiconductor devise and manufacturing method thereof, Gerben Doornbos, Chun-Hsiung Lin, Chien-Hsun Wang, Carlos H. Diaz, US9871101B2 (2018)

  4. FinFET structures and methods of forming the same, Chun-Hsiang Fan, Yung-Ta Li, Mao-Lin Huang, Chun-Hsiung Lin, US9543419B1 9 (2017)

  5. Horizontal Gate-All-Around device having wrapped-around source and drain, Chun-Hsiung Lin, Chung-Cheng Wu, Carlos H. Diaz, Chih-Hao Wang, Wen-Hsing Hsieh, Yi-Ming Sheu, US9754840B2 (2017)

  6. Vertical Gate-All-Around (VGAA) devices and methods of manufacturing the same, Yu-Lien Huang, Chun-Hsiung Lin, Chi-Wen Liu, US9536738B2 (2017)

  7. Semiconductor structure with feature spacer and method for manufacturing the same, Kuo-Cheng Ching, Chun-Hsiung Lin, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz, US9716096B1 (2017)

  8. Method of forming butted contact, Chih-Hao Wang, Chun-Hsiung Lin, Chia-Hao Chang, Jia-Chuan You, Wei-Hao Wu, Yi-Hsiung Lin, Zhi-Chang Lin, US9564363B1 (2017)

  9. Method of forming horizontal Gate-All-Around structure, Huan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chien-Hsun Wang, Chun-Hsiung Lin, US9312186B1(2016)

  10. Semiconductordeviceandmanufacturingmethodthereof, Yung-SungYen, Huan-Justin, Chun-Hsiung Lin, Chi-Cheng Hung, US9508817B2 (2016)

  11. Transistor and method for forming the same, Chien-Hsun Wang, Mao-Lin Huang, Chun-Hsiung Lin, US9276084B2 (2016)

  12. Contacts For Highly Scaled Transistors, Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung, US9508858B2 (2016)

  13. NanowireMOSFETwithsupportstructuresforsourceanddrain, Chien-HsunWang, Mao-LinHuang, Chun-Hsiung Lin, Jean-Pierre Colinge, US9048301B2 (2015)

  14. MethodandapparatusforformingaCMOSdevice, Li-TingWang, Teng-ChunTsai, Chun-Hsiung Lin,Cheng-TungLin, Chi-Yuan Chen, Kuo-Yin Lin, Wan-Chun Pan, Ming-Liang Yen, Huicheng Chang, US9064959B2 (2015)

  15. Semiconductor devise and formation thereof, Mao-Lin Huang, Chien-Hsun Wang, Chun-Hsiung Lin, Meng-Ku Chen, Li-Ting Wang, Hung-Ta Lin, US9184289B2 (2015)
  16. Fin structure and method for forming the same, Chun-Hsiung Lin, Carlos H. Diaz, Hui-Cheng Chang, Syun-Ming Jang, Mao-Lin Huang, Chun-Hsiung Lin, US9214513B2 (2015)
  17. Delta doping layer in MOSFET source/drain region, Hung-Ta Lin, Mao-Lin Huang, Li-Ting Wang, Chien-Hsun Wang, Meng-Ku Chen, Chun-Hsiung Lin, Pang-Yen Tsai, Hui-Cheng Chang, US9166035B2 (2015)
  18. Semiconductor device having fin-type channel and method for forming the same, Chien-Hsun Wang, Chun-Hsiung Lin, Mao-Lin Huang, US9147766B2 (2015)