Recruiting

歡迎對半導體元件製程與特性研究有興趣的同學加入

招募碩博班學生與專題生 

Recruiting passionate graduates & undergraduates

本實驗室持續招收碩博班學生以及專題生,若對半導體元件以及新材料之開發相關研究有興趣者,歡迎聯絡林群雄教授,一同加入我們的團隊!

若對以下計畫有興趣者歡迎聯絡林群雄老師:

> 鐵電氧化物半導體元件開發於記憶體之應用

> 新式氮化鎵元件與製程

> 砷化銦鎵通道MOSFET於高頻放大器之應用

> 以Core-Shell結構整合砷化銦鎵通道與矽鰭式場效電晶體

> 若想知道更多,請與林群雄老師聯繫。


Join in us as graduates and undergraduates !

Drop me an email if you are interesting in the following projects.

  • Development of high-performance ferroelectric gate oxide semiconductor transistor for memory application.
  • GaN devices and processing.
  • InGaAs channel MOSFET for high-frequency amplifier application.
  • Integration of InGaAs channel with Si FinFET using Core-Shell structure.
  • If you want to know more, please contact professor Lin via email.

Areas of Research

  1. III-V/III-N High speed/high power devices.
  2. Key Process technologies and materials enabling next generation CMOS.
  3. Hetero-integration of III-V and Silicon.

國立陽明交通大學  先進材料及半導體元件實驗室 

Advanced Material &Semiconductor Device Lab, NYCU

國立陽明交通大學-AMSD Lab

新竹市大學路1001號

+886-3-5712121 #55918

chun_lin@nctu.edu.tw

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