Lecture
課程
"More than Moore" devices refer to the groups of devices with diversified functions other than advanced mainstream Si-based CMOS digital ICs, like SoC-based processors or FPGA, which are scaled following Moore's law. A variety of devices, including special memories, analog/RF, power, sensors or photonics devices, have recently been intensive developed based on Si-based CMOS compatible technologies to enable heterogeneous integration of devices with multiple functions for new applications such as artificial intelligence (AI), internet of things (IOT), or automotive electronics. This course is intended to offer the most up-to-date knowledge in physical principles, materials, processes, device designs, and performance metrics for these devices. The goal is to provide a comprehensive survey of the "More than Moore" devices in a perspective that is more application-oriented to facilitate students to conduct research or pursue career in relevant areas.
This course covers the fundamental semiconductor material and device characteristics as well as the commonly used characterization techniques in semiconductor research and industry. Electrical characterization is the main focus since the performance of devices can be directly measured or interpreted. Material characterization techniques, including electron beam, X-ray, ion beam, and optical methods, that are usually employed for in-line monitor, process development or failure analysis are also emphasized. The object of the course is to prepare students with the knowledge linking semiconductor materials and device characteristics with measurement techniques for them to pursue advanced graduated research or careers in industry.
Topic
- CMOS Device and Scaling
- RF Devices
- Power Device
- Sensors
- Integrated Photonics
- Hetero-integration
- Emerging Memories
Topic
- Basics of Semiconductor Physics
- Review of Semiconductor Devices
- Resistance and Capacitance Measurements;
- Doping and Mobility of Semiconductor MaterialsJunctions (PN, Metal-semiconductor)
- MOSCAP, Gate Dielectrics, and Interface
- Characterization of Electronic Defects
- Characterization of Transistor
- Electron Beam Techniques
- X-ray Analysis
- Ion Beam Methods
- Optical Methods
- Surface Profile and Contamination