Advisor

教授

林群雄 教授
Chun-Hsiung Lin, Professor, ICST, NYCU

Office: Room 601, Microelectronics and Information System Research Center, NYCU
Telephone:+886-3-5712121 #55918
Email : chun_lin@nycu.edu.tw 


學歷 (Education ) :

1995-2000    Ph.D.,   Materials Science & Engineering, UIUC
1993-1995     M.S,      Materials Science & Engineering, Rutgers University 
1986-1990     B.S,       Materials Science & Engineering, NTHU


主要經歷(Experience):

2019 - present  教授, 國立陽明交通大學 國際半導體產業學院
                           Professor, ICST, NYCU
2012 - 2019       經理, 台灣積體電路股份有限公司
                           Manager, TSMC
2006 - 2012      Staff Engineer, Northrop Grumman Aerospace System. CA, USA
2001 - 2006      R&D Engineer, Wireless Semiconductor Division, Agilent Technologies Inc.
                           (i.e. Avago Technologies/now Broadcom, USA)
2000 - 2001      Sr. Engineer, Portland Technology Development, Intel Corporation, USA


SUMMARY

Chun-Hsiung Lin joined the International College of Semiconductor Technology (ICST), National Chiao-Tung University (NCTU, now is NYCU) as a professor in 2019. Prior to joining ICST, he was an integration manager in the R&D organization of Taiwan Semiconductor Manufacturing Company (TSMC) working on transistor research for the advanced logic technology nodes. He led a team to demonstrate III-V MOSFET/FinFET with record device performance (presented in IEEE Symposium on VLSI Tech. 2015 & 2016) as well as various Si 3D transistors (e.g. gate-all-around). At this position, he also works with staff in TSMC, Belgium (i.e. in IMEC) on innovative concepts for semiconductor devices. Before joining TSMC, he has been in the III-V compound semiconductor industry for more than 10 years. From 2006 to 2012, he was a staff engineer in Northrop Grumman Aerospace System (former TRW), Redondo Beach, CA, where he worked on frontier III-V devices from narrow band-gap Sb-based to wide band-gap GaN materials for the insertion in the next-generation payload of satellites or phased array systems. In particular, he explored the ultra-low voltage (< 0.5V) devices/circuits for phased array applications. From 2001 to 2006, he was an R&D engineer in Agilent Technology (now Broadcom), Fort Collins, CO, where he pioneered the industry's first enhancement-mode PHEMT for millimeter-wave (mmW) applications. He authored and co-authored more than 30 technical journal & conference publications and 18 granted US patents with more pending.